? semiconductor components industries, llc, 2013 december, 2013 ? rev. 12 1 publication order number: 2n5655/d 2n5655g, 2n5657g plastic npn silicon high-voltage power transistors these devices are designed for use in line?operated equipment such as audio output amplifiers; low?current, high?voltage converters; and ac line relays. features ? excellent dc current gain ? high current?gain ? bandwidth product ? these devices are pb?free and are rohs compliant* maximum ratings (note 1) rating symbol value unit collector?emitter voltage 2n5655g 2n5657g v ceo 250 350 vdc collector?base voltage 2n5655g 2n5657g v cb 275 375 vdc emitter?base voltage v eb 6.0 vdc collector current ? continuous i c 0.5 adc collector current ? peak i cm 1.0 adc base current i b 1.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. indicates jedec registered data. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com 0.5 ampere power transistors npn silicon 250?350 volts, 20 watts marking diagram y = year ww = work week 2n565x = device code x = 5 or 7 g = pb?free package 2n5657g to?225 (pb?free) 500 units / bulk device package shipping 2n5655g to?225 (pb?free) 500 units / bulk ordering information 3 base 1 emitter collector 2, 4 yww 2 n565xg to?225 case 77?09 style 1 1 2 3
2n5655g, 2n5657g http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) (note 2) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (i c = 100 madc (inductive), l = 50 mh) 2n5655g 2n5657g v ceo(sus) 250 350 ? ? vdc collector?emitter breakdown voltage (i c = 1.0 madc, i b = 0) 2n5655g 2n5657g v (br)ceo 250 350 ? ? vdc collector cutoff current (v ce = 150 vdc, i b = 0) 2n5655g (v ce = 250 vdc, i b = 0) 2n5657g i ceo ? ? 0.1 0.1 madc collector cutoff current (v ce = 250 vdc, v eb(off) = 1.5 vdc) 2n5655g (v ce = 350 vdc, v eb(off) = 1.5 vdc) 2n5657g (v ce = 150 vdc, v eb(off) = 1.5 vdc, t c = 100 c) 2n5655g (v ce = 250 vdc, v eb(off) = 1.5 vdc, t c = 100 c) 2n5657g i cex ? ? ? ? 0.1 0.1 1.0 1.0 madc collector cutoff current (v cb = 275 vdc, i e = 0) 2n5655g (v cb = 375 vdc, i e = 0) 2n5657g i cbo ? ? 10 10 adc emitter cutoff current (v eb = 6.0 vdc, i c = 0) i ebo ? 10 adc on characteristics dc current gain (note 3) (i c = 50 madc, v ce = 10 vdc) (i c = 100 madc, v ce = 10 vdc) (i c = 250 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 10 vdc) h fe 25 30 15 5.0 ? 250 ? ? ? collector?emitter saturation voltage (note 3) (i c = 100 madc, i b = 10 madc) (i c = 250 madc, i b = 25 madc) (i c = 500 madc, i b = 100 madc) v ce(sat) ? ? ? 1.0 2.5 10 vdc base?emitter voltage (i c = 100 madc, v ce = 10 vdc) (note 3) v be ? 1.0 vdc dynamic characteristics current?gain ? bandwidth product (i c = 50 madc, v ce = 10 vdc, f = 10 mhz) (note 4) f t 10 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 100 khz) c ob ? 25 pf small?signal current gain (i c = 100 madc, v ce = 10 vdc, f = 1.0 khz) h fe 20 ? ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. indicates jedec registered data for 2n5655 series. 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t is defined as the frequency at which |h fe | extrapolates to unity.
2n5655g, 2n5657g http://onsemi.com 3 40 0 25 50 75 100 150 figure 1. power derating t c , case temperature ( c) 30 20 10 p d , power dissipation (watts) 125 safe area limits are indicated by figures 3 and 4. both limits are applicable and must be observed. figure 2. sustaining voltage test circuit 50 mh 200 50 v + - + x y to scope h g relay 300 1.0 6.0 v 1.0 20 figure 3. active?region safe operating area v ce , collector-emitter voltage (volts) 0.5 0.2 0.1 0.01 30 40 60 100 200 300 400 600 second breakdown limit thermal limit @ t c = 25 c bonding wire limit i c , collector current (amp) curves apply below rated v ceo t j = 150 c d- c 1.0 ms 0.05 0.02 10 s 2n5655 2n5657 500 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 4. current gain i c , collector current (ma) 300 10 1.0 200 100 70 50 30 2.0 3.0 5.0 7.0 30 50 70 100 200 300 500 10 20 h fe , dc current gain 20 t j = +150 c +25 c -55 c v ce = 10 v v ce = 2.0 v +100 c
2n5655g, 2n5657g http://onsemi.com 4 1.0 10 i c , collector current (ma) 0.8 0.6 0.4 0 20 50 100 200 300 500 v be(sat) @ i c /i b = 10 v, voltage (volts) 0.2 30 v be @ v ce = 10 v v ce(sat) @ i c /i b = 10 i c /i b = 5.0 t j = + 25 c figure 5. ?on? voltages 300 0.1 v r , reverse voltage (volts) 10 2.0 5.0 10 20 50 100 0.2 0.5 1.0 c, capacitance (pf) 200 70 50 30 c ib c ob 100 20 t j = + 25 c figure 6. capacitance 10 1.0 figure 7. turn?on time i c , collector current (ma) t, time (s) 5.0 2.0 1.0 0.5 0.2 0.1 0.01 2.0 5.0 10 20 50 100 500 0.05 0.02 200 t r i c /i b = 10 v cc = 300 v, v be(off) = 2.0 v (2n5657, only) v cc = 100 v, v be(off) = 0 v t d 10 1.0 figure 8. turn?off time i c , collector current (ma) t, time (s) 5.0 2.0 1.0 0.5 0.2 0.1 2.0 5.0 10 20 50 100 500 200 t s i c /i b = 10 t f v cc = 100 v v cc = 300 v (type 2n5657, only)
2n5655g, 2n5657g http://onsemi.com 5 package dimensions to?225 case 77?09 issue ac dim min max millimeters d 10.60 11.10 e 7.40 7.80 a 2.40 3.00 b 0.60 0.90 p 2.90 3.30 l1 1.27 2.54 c 0.39 0.63 l 14.50 16.63 b2 0.51 0.88 q 3.80 4.20 a1 1.00 1.50 e 2.04 2.54 e 123 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. number and shape of lugs optional. 2x 2x q d l1 p b2 b e c l a1 a front view back view front view side view 1 2 3 3 2 1 4 pin 4 backside tab style 1: pin 1. emitter 2., 4. collector 3. base on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 2n5655/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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